2N6594

2N6594

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See Product Specifications

2N6594
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N6594 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N6594
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):acf70af5797317fd532641fd68230c32
Voltage - Collector Emitter Breakdown (Max):628cbc3e45d5bacb32414a526acf56ef
Vce Saturation (Max) @ Ib, Ic:336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:d30bf215fe80afdb33e3ca3330ee60d1
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:acacc2b55ee43fad1b569abde9a9b21c
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
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