PSMN6R3-120ESQ

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See Product Specifications

Mfr. #:

PSMN6R3-120ESQ

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 120V 70A I2PAK

Упаковка:

Tube

Datasheet:

PSMN6R3-120ESQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN6R3-120ESQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:	47916a4829b89bb236b00d9cd3628313
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	51fb230902e5eda9632591e8701b6a2d
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	c3533a58fb984bdf5719f93fd64ebce6
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	aa1c196080c484585e8a295474513c59
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fe7030b756f0b9f2e5ec33b7a9c0f138
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687