RJK0332DPB-00#J0

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Mfr. #:

RJK0332DPB-00#J0

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 30V 35A LFPAK

Упаковка:

Bulk

Datasheet:

RJK0332DPB-00#J0 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RJK0332DPB-00#J0
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	3ae79fae666fbc50d5011ee35b33c896
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	344f2f29e13dbe9f3473bbf11084eac1
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	d367a81e85bd61447b895bb960a3abd6
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	d68efaf39ad12d9279198ac7d38ba0fe
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bd034e688a635e51e1b068e907e76dd9
Package / Case:	5c758174f491275ad8924bc0627a08e5