TPAR3D S1G

TPAR3D S1G

Images are for reference only
See Product Specifications

TPAR3D S1G
Описание:
DIODE AVALANCHE 200V 3A TO277A
Упаковка:
Tape & Reel (TR)
Datasheet:
TPAR3D S1G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TPAR3D S1G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:e0f9771ae9c968d8de36deb908204d09
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:136a4c5380c753cedd88ca50b6f77e0f
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):3c2af734006e82e8305533177374f357
Current - Reverse Leakage @ Vr:b74ef6fb4de700e3379a952a2fb629b3
Capacitance @ Vr, F:7dbe68d972e33dc58f8c475b613ee963
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:95ae4b5e61cf7cfd6c73161de8ac2c76
Supplier Device Package:50ec731c6032104f4ca5ebb07826fdaa
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 8989
Stock:
8989 Can Ship Immediately
  • Делиться:
Для использования с
NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
ES3A-13-F
ES3A-13-F
Diodes Incorporated
DIODE GEN PURP 50V 3A SMC
S07B-M-08
S07B-M-08
Vishay General Semiconductor - Diodes Division
DIODE GP 100V 500MA DO219AB
SBR5E60P5-7
SBR5E60P5-7
Diodes Incorporated
DIODE SBR 60V 5A POWERDI5
CD5806
CD5806
Microchip Technology
RECTIFIER UFR,FRR
VS-42HF120
VS-42HF120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 40A DO203AB
VS-SD400C24C
VS-SD400C24C
Vishay General Semiconductor - Diodes Division
DIODE GP 2.4KV 800A DO200AA
D6020L55
D6020L55
Littelfuse Inc.
DIODE GEN PURP 600V 12.7A TO220
ES2GHE3/52T
ES2GHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 2A DO214AA
NTSB30100S-1G
NTSB30100S-1G
onsemi
DIODE SCHOTTKY 100V 30A I2PAK
RSFDL MQG
RSFDL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 500MA SUBSMA
HER306-AP
HER306-AP
Micro Commercial Co
DIODE GPP HE 3A DO-201AD
Вас также может заинтересовать
1KSMB10AH
1KSMB10AH
Taiwan Semiconductor Corporation
TVS DIODE 8.55VWM 14.5VC DO214AA
SMB10J11AH
SMB10J11AH
Taiwan Semiconductor Corporation
TVS DIODE 11VWM 18.2VC DO214AA
SMBJ18A M4G
SMBJ18A M4G
Taiwan Semiconductor Corporation
TVS DIODE 18VWM 29.2VC DO214AA
P4SMA100AHR3G
P4SMA100AHR3G
Taiwan Semiconductor Corporation
TVS DIODE 85.5VWM 137VC DO214AC
BZW04-78HA0G
BZW04-78HA0G
Taiwan Semiconductor Corporation
TVS DIODE 78VWM 125VC DO204AL
P4KE22CA A0G
P4KE22CA A0G
Taiwan Semiconductor Corporation
TVS DIODE 18.8VWM 30.6VC DO204AL
GBPC5004 T0G
GBPC5004 T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 400V 50A GBPC40
KBP207G C2G
KBP207G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 2A KBP
UF1DLW RVG
UF1DLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123W
HER202G R0G
HER202G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
BZT55C43 L0G
BZT55C43 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 43V 500MW MINI MELF
BZD17C11P R3G
BZD17C11P R3G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 800MW SUB SMA