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See Product Specifications
| номер части: | 2SA1931,NETQ(M |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 5334a732bb00504c525ac18c7e8c78df |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Vce Saturation (Max) @ Ib, Ic: | 6105df555a749cb95a07ac16ebe6483b |
| Current - Collector Cutoff (Max): | edb6b56e8e88a4e081c3366a9258a9e6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 62666a04b2e641bae8b7627940c48906 |
| Power - Max: | b8a311ed3f21d724b699490a1101fe1b |
| Frequency - Transition: | 7171440a683a571cf79d1068e05f8894 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |
| Supplier Device Package: | 2dd8b787e28aa6ef43cc949cca56403f |
