TPCC8104,L1Q

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See Product Specifications

Mfr. #:

TPCC8104,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 20A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPCC8104,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPCC8104,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	f3e50bda5dae0c1bd85e045d04d7383d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	7f81c6dd50fec0902d019af0ec918d8d
Vgs(th) (Max) @ Id:	b51acc836e2aea42bf844545c0460aa5
Gate Charge (Qg) (Max) @ Vgs:	cb7f32980d4e20761ca926e278c4ed39
Vgs (Max):	3c81c5d94681cbb93e31f6893f8db947
Input Capacitance (Ciss) (Max) @ Vds:	0fef63564dcaf473a8a2f93c9f6a2a76
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	450d6a586c2ccaba993b7e31cee9b087
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9