VS-GB200TH120N

VS-GB200TH120N

Images are for reference only
See Product Specifications

VS-GB200TH120N
Описание:
IGBT MOD 1200V 360A INT-A-PAK
Упаковка:
Bulk
Datasheet:
VS-GB200TH120N Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-GB200TH120N
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Modules
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Configuration:0e519aa66424d7388ab5f73741de20e8
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):2ca1081061f1bda3f48486da262692b1
Power - Max:a702725ccada9561b44b9b5ef9c02bb8
Vce(on) (Max) @ Vge, Ic:dddd724981ac93dcfb5c20efe53bc423
Current - Collector Cutoff (Max):0791270b73e4d7befa4d41e9866c702c
Input Capacitance (Cies) @ Vce:2755116ca72ae9c60208162164b84c74
Input:eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:6bc22e4678f3fde53847ab49e658c6da
Supplier Device Package:d099474891f98b39599d8c2397e67b5c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BSM75GB120DN2HOSA1
BSM75GB120DN2HOSA1
Infineon Technologies
MEDIUM POWER 34MM
FF150R12KT3GHOSA1
FF150R12KT3GHOSA1
Infineon Technologies
IGBT MOD 1200V 225A 780W
BSM50GP60B2BOSA1
BSM50GP60B2BOSA1
Infineon Technologies
IGBT MODULE
APT50GP60J
APT50GP60J
Microchip Technology
IGBT MOD 600V 100A 329W ISOTOP
IXBN75N170
IXBN75N170
IXYS
IGBT MOD 1700V 145A 625W SOT227B
APTGLQ150A120TG
APTGLQ150A120TG
Microchip Technology
IGBT MODULE 1200V 250A 750W SP4
IFT150B12N3E4BOSA1
IFT150B12N3E4BOSA1
Infineon Technologies
MOD IGBT LOW PWR ECONO
FZ2400R17HE4PB9HPSA1
FZ2400R17HE4PB9HPSA1
Infineon Technologies
IGBT MODULE 1700V 2400A
APTGF15A120T1G
APTGF15A120T1G
Microsemi Corporation
IGBT MODULE 1200V 25A 140W SP1
APTGT100SK170D1G
APTGT100SK170D1G
Microsemi Corporation
IGBT MODULE 1700V 200A 695W D1
APTGT150DA170D1G
APTGT150DA170D1G
Microsemi Corporation
IGBT MODULE 1700V 280A 780W D1
FB10R06KL4BOMA1
FB10R06KL4BOMA1
Infineon Technologies
MOD IGBT LOW PWR EASY1-1
Вас также может заинтересовать
SM6T18CAHM3_A/H
SM6T18CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SMB8J15CAHE3_A/I
SMB8J15CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15VWM 24.4VC DO214AA
SMCG26A-E3/57T
SMCG26A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 26VWM 42.1VC DO215AB
SMCG130CAHE3/9AT
SMCG130CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 130VWM 209VC DO215AB
SA33C-E3/54
SA33C-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 33VWM 59VC DO204AC
SM8S12-E3/2D
SM8S12-E3/2D
Vishay General Semiconductor - Diodes Division
TVS DIODE 12VWM 22VC DO218AB
SMAJ60AHE3/61
SMAJ60AHE3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 60VWM 96.8VC DO214AC
BAS21-HE3-18
BAS21-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BYM07-300HE3/83
BYM07-300HE3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 500MA DO213
SMAZ5934B-M3/5A
SMAZ5934B-M3/5A
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 500MW DO214AC
BZD27C10P-HE3-18
BZD27C10P-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 800MW DO219AB
TZM5222F-GS18
TZM5222F-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.5V 500MW SOD80