VS-GB200TH120N

VS-GB200TH120N

Images are for reference only
See Product Specifications

VS-GB200TH120N
Описание:
IGBT MOD 1200V 360A INT-A-PAK
Упаковка:
Bulk
Datasheet:
VS-GB200TH120N Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-GB200TH120N
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Modules
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Configuration:0e519aa66424d7388ab5f73741de20e8
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):2ca1081061f1bda3f48486da262692b1
Power - Max:a702725ccada9561b44b9b5ef9c02bb8
Vce(on) (Max) @ Vge, Ic:dddd724981ac93dcfb5c20efe53bc423
Current - Collector Cutoff (Max):0791270b73e4d7befa4d41e9866c702c
Input Capacitance (Cies) @ Vce:2755116ca72ae9c60208162164b84c74
Input:eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:6bc22e4678f3fde53847ab49e658c6da
Supplier Device Package:d099474891f98b39599d8c2397e67b5c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FS450R12OE4BOSA1
FS450R12OE4BOSA1
Infineon Technologies
IGBT MOD 1200V 660A 2250W
F4100R06KL4BOSA1
F4100R06KL4BOSA1
Infineon Technologies
LOW POWER ECONO
FP35R12W2T7BPSA1
FP35R12W2T7BPSA1
Infineon Technologies
LOW POWER EASY AG-EASY2B-711
NXH400N100H4Q2F2PG
NXH400N100H4Q2F2PG
onsemi
MASS MARKET 250KW 1500V Q2 PACK
FF300R12KS4PHOSA1
FF300R12KS4PHOSA1
Infineon Technologies
IGBT MODULE 1200V 300A
APTGL700U120D4G
APTGL700U120D4G
Microchip Technology
IGBT MODULE 1200V 910A 3000W D4
FF800R17KE3NOSA1
FF800R17KE3NOSA1
Infineon Technologies
IGBT MODULE 1700V 4450W
STGE50NC60VD
STGE50NC60VD
STMicroelectronics
IGBT MODULE 600V 90A 260W ISOTOP
APTGF50DH120TG
APTGF50DH120TG
Microsemi Corporation
IGBT MODULE 1200V 75A 312W SP4
CM50TL-24NF
CM50TL-24NF
Powerex Inc.
IGBT MOD 1200V 50A 390W
IRG5U100HF12A
IRG5U100HF12A
Infineon Technologies
IGBT MOD 1200V 200A POWIR 34
IRG7T200HF12B
IRG7T200HF12B
Infineon Technologies
IGBT MOD 1200V 400A POWIR 62
Вас также может заинтересовать
1.5SMC91CA-E3/57T
1.5SMC91CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 77.8VWM 125VC SMC
1.5KE27CA-E3/54
1.5KE27CA-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC 1.5KE
SMB10J36A-E3/5B
SMB10J36A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 36VWM 58.1VC DO214AA
P6KE39HE3/54
P6KE39HE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 31.6VWM 56.4VC DO204AC
1N4937GPE-E3/54
1N4937GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
VS-SD1100C32L
VS-SD1100C32L
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 3.2KV 910A B-43
VS-30EPH06PBF
VS-30EPH06PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO247AC
RGF1G-1HE3/67A
RGF1G-1HE3/67A
Vishay General Semiconductor - Diodes Division
DIODE GENERAL PUROSE
1N5265B-TAP
1N5265B-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 500MW DO35
MMSZ5241B-HE3-08
MMSZ5241B-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 500MW SOD123
SMZG3798BHE3/52
SMZG3798BHE3/52
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 1.5W DO215AA
VS-ST333S04PFL0P
VS-ST333S04PFL0P
Vishay General Semiconductor - Diodes Division
SCR 400V 518A TO209AE