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See Product Specifications
| номер части: | 2N5871 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Harris Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | a47719ecb32d7606a5528e41a07e5236 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | f0823195f3851c2df919d48cb4e6228e |
| Power - Max: | 92e7f90834277d0da34b7838c52a153e |
| Frequency - Transition: | 550516a79299d4aa4cb3d6655c89c3a8 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | d951b62dcd3ff3e2b9df0a3e52e82ddb |
