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See Product Specifications
| номер части: | 2N6761 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Harris Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 22b306863526200c7594190913dbf221 |
| Current - Continuous Drain (Id) @ 25°C: | 7d3de555b1c3a2ae51332998545e5d39 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 0991288577f5d1688ecd09f6863cd24d |
| Vgs(th) (Max) @ Id: | e059cfdd0b6079599844a290801e2b56 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 464fbfb65acb73af27e220370a6cb0cc |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | fc68e31357073b0dee08946ec891c227 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | d951b62dcd3ff3e2b9df0a3e52e82ddb |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
