FQI10N20CTU

FQI10N20CTU

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FQI10N20CTU
Описание:
MOSFET N-CH 200V 9.5A I2PAK
Упаковка:
Tube
Datasheet:
FQI10N20CTU Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FQI10N20CTU
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Fairchild Semiconductor
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:8f558f6cfca01ccd333844543800f839
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:fe23799b782b51a06f9e18afac4be7ee
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:3c309df0dab075d5fb4f85fd7f1eb952
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:e0f3fd8e4b1a7767cba71de674e4c3e2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f01744b206dcc2ff656abffeb58f0284
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:157ab15d91840391a0935f6d39821144
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 1055
Stock:
1055 Can Ship Immediately
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