G3S06505A

G3S06505A

Images are for reference only
See Product Specifications

G3S06505A
Описание:
SIC SCHOTTKY DIODE 650V 5A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G3S06505A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S06505A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):556b2652b9717e0d0fb4bc28baa6d684
Voltage - Forward (Vf) (Max) @ If:7f0bb00b878abfa6bbe641e580323fdc
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:0e4e7889ddf570c13e146086aba4c0d9
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HSM123-92TR-E
HSM123-92TR-E
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
IDFW80C65D1XKSA1
IDFW80C65D1XKSA1
Infineon Technologies
IDFW80C65D1XKSA1
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
CDBMS160-HF
CDBMS160-HF
Comchip Technology
DIODE SCHOTTKY 60V 1A SOD-123F
UG58GH
UG58GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO201AD
SF4002-TAP
SF4002-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVAL 1A 100V SOD-57
SD175SC100A.T1
SD175SC100A.T1
SMC Diode Solutions
PIV 100V IO 30A CHIP SIZE 175MIL
MA3X70400L
MA3X70400L
Panasonic Electronic Components
DIODE SCHOTTKY 15V 30MA MINI3
CMS11(TE12L)
CMS11(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 2A MFLAT
FDH600_T50R
FDH600_T50R
onsemi
DIODE GEN PURP 50V 200MA DO35
AR4PGHM3/86A
AR4PGHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 2A TO277A
GP10J-M3/54
GP10J-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
Вас также может заинтересовать
G3S06516B
G3S06516B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 16A 3-PI
G3S12010BM
G3S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G3S06504H
G3S06504H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S12002D
G3S12002D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S06505DT
G5S06505DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G3S06508A
G3S06508A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G3S06505A
G3S06505A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S06510AT
G4S06510AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06506QT
G5S06506QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A DFN8*
G5S12005C
G5S12005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G5S12010A
G5S12010A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S17005A
G3S17005A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI