G3S12002H

G3S12002H

Images are for reference only
See Product Specifications

G3S12002H
Описание:
SIC SCHOTTKY DIODE 1200V 2A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G3S12002H Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S12002H
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):e74fd30427336ca1ddbff6459288057d
Voltage - Forward (Vf) (Max) @ If:06b2f1243a1eb955b5482a33670309ee
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:06f90a5195568577e83b6082e69db5a0
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:0b3f3c936192051240c8337b7cfe4c02
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
V8PM12HM3_A/H
V8PM12HM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 3.6A TO277A
TUAS8K
TUAS8K
Taiwan Semiconductor Corporation
8A, 800V, STANDARD RECOVERY RECT
70HF100
70HF100
Solid State Inc.
DO5 70 AMP SILICON RECTFIER KK
PX1500D
PX1500D
Diotec Semiconductor
DIODE STD D8X7.5 200V 15A
HSM124S-JTL
HSM124S-JTL
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
UPS130L/TR13
UPS130L/TR13
Microchip Technology
DIODE SCHOTTKY 1A 30V POWERMITE
S20130
S20130
Microchip Technology
STD RECTIFIER
ZHCS756TC
ZHCS756TC
Diodes Incorporated
DIODE SCHOTTKY 60V 750MA SOT23-3
CEFC304-G
CEFC304-G
Comchip Technology
DIODE GEN PURP 400V 3A DO214AB
EGL34DHE3/83
EGL34DHE3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 500MA DO213
RGP10JE-E3/53
RGP10JE-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
SS36LHMHG
SS36LHMHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
Вас также может заинтересовать
G3S06508B
G3S06508B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 3-PIN
G3S12004B
G3S12004B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 4A 3-PI
G5S06505CT
G5S06505CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G5S06506DT
G5S06506DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G4S06510CT
G4S06510CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G4S06510JT
G4S06510JT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S12005A
G3S12005A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S06510P
G3S06510P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06520AT
G5S06520AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S12010M
G3S12010M
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S06530A
G3S06530A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 2-PI
G3S12010H
G3S12010H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P