G3S12005H

G3S12005H

Images are for reference only
See Product Specifications

G3S12005H
Описание:
SIC SCHOTTKY DIODE 1200V 5A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G3S12005H Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S12005H
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):db2cca1dd6bc4692b5dca9b27b61f3d8
Voltage - Forward (Vf) (Max) @ If:7f0bb00b878abfa6bbe641e580323fdc
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:5600624ec25cac17132cd6a01c68e5d5
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:0b3f3c936192051240c8337b7cfe4c02
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
VSKY05201006-G4-08
VSKY05201006-G4-08
Vishay General Semiconductor - Diodes Division
DIODE SCHTKY 20V 500MA CLP10062L
GL41DHE3/96
GL41DHE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
SRAS20150H
SRAS20150H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 20A TO263AB
JANTX1N5550/TR
JANTX1N5550/TR
Microchip Technology
STD RECTIFIER
JANTX1N6078
JANTX1N6078
Microchip Technology
DIODE GEN PURP 150V 1.3A AXIAL
SD103BWS-7
SD103BWS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 350MA SOD323
8EWS08STRL
8EWS08STRL
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A DPAK
R9G21009ASOO
R9G21009ASOO
Powerex Inc.
DIODE FAST REC R9G 900A 1000V
RL204
RL204
SMC Diode Solutions
DIODE GEN PURP 400V 2A DO15
FR106G A0G
FR106G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
SFA1002G C0G
SFA1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO220AC
D740N36TXPSA1
D740N36TXPSA1
Infineon Technologies
DIODE GEN PURP 3.6KV 750A
Вас также может заинтересовать
G4S06520BT
G4S06520BT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI
G3S12010BM
G3S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G3S12010B
G3S12010B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G4S12040BM
G4S12040BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G3S06504D
G3S06504D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S06505H
G3S06505H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G3S12002A
G3S12002A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S06506AT
G5S06506AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G4S06510HT
G4S06510HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G4S06510PT
G4S06510PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06508PT
G5S06508PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S12005D
G5S12005D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI