G3S12010A

G3S12010A

Images are for reference only
See Product Specifications

G3S12010A
Описание:
SIC SCHOTTKY DIODE 1200V 10A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G3S12010A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S12010A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):7f43c84497b903322e2f5ae2ba609cf1
Voltage - Forward (Vf) (Max) @ If:b624027fd8b25f11c8e56782f07f0199
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:9d2d1f10ab1b173f59cdac17cd7820ed
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS100AS-AU_R1_000A1
BAS100AS-AU_R1_000A1
Panjit International Inc.
SOD-123, SKY
1N4937T/R
1N4937T/R
EIC SEMICONDUCTOR INC.
FR 1A, CASE TYPE: DO-41
MMBD4148W-7-F
MMBD4148W-7-F
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOT323
SB250_R2_00001
SB250_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
PG2010R_R2_00001
PG2010R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
B3100Q-13-F
B3100Q-13-F
Diodes Incorporated
DIODE SCHOTTKY 100V 3A SMC
SBR1045SP5Q-13
SBR1045SP5Q-13
Diodes Incorporated
DIODE SBR 45V 10A POWERDI 5
JANTX1N6631U/TR
JANTX1N6631U/TR
Microchip Technology
RECTIFIER UFR,FRR
1N4138R
1N4138R
Microchip Technology
STD RECTIFIER
DTV1500HDFP
DTV1500HDFP
STMicroelectronics
DIODE GEN PURP 1.5KV 6A TO220FP
HS3D M6G
HS3D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
ES3B R7
ES3B R7
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
Вас также может заинтересовать
G3S12006B
G3S12006B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 6A 3-PI
G3S17020B
G3S17020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 20A 3-P
G5S06502AT
G5S06502AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 2A 2-PIN
G3S12003H
G3S12003H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G5S06505DT
G5S06505DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S06510HT
G4S06510HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510PT
G5S06510PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510DT
G5S06510DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12010A
G5S12010A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12010P
G3S12010P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12010M
G3S12010M
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G5S12020H
G5S12020H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P