G3S12010BM

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See Product Specifications

Mfr. #:

G3S12010BM

Mfr.:

Global Power Technology-GPT

Описание:

SIC SCHOTTKY DIODE 1200V 10A 3-P

Упаковка:

Cut Tape (CT)

Datasheet:

G3S12010BM Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G3S12010BM
Категория:	Discrete Semiconductor Products
Подкатегория:	Diodes - Rectifiers - Arrays
Производитель:	Global Power Technology-GPT
Упаковка:	Cut Tape (CT)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Diode Configuration:	1f381491ec259630d231305cac2dda5c
Diode Type:	d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io) (per Diode):	2b6261f45389e6a5e40f61701eed8cfe
Voltage - Forward (Vf) (Max) @ If:	7f0bb00b878abfa6bbe641e580323fdc
Speed:	4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):	b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:	175227bc732c5d53d4bd3a530d3e2bd5
Operating Temperature - Junction:	8fc8607d1eb9d0c756392186b450f26c
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:	cb24d8a945145cef1317257ec42e9ef0

In Stock: 0

Stock:

0 Can Ship Immediately