G3S12010D

G3S12010D

Images are for reference only
See Product Specifications

G3S12010D
Описание:
SIC SCHOTTKY DIODE 1200V 10A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G3S12010D Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S12010D
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):9cf9d91a7770ef889df64ff64156bb46
Voltage - Forward (Vf) (Max) @ If:b624027fd8b25f11c8e56782f07f0199
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:dcd54000565bd1139c80ef73b9ee87b8
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SS13 R3G
SS13 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AC
HS1M-F1-3000HF
HS1M-F1-3000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 1A DO214AC
S1K-LTP
S1K-LTP
Micro Commercial Co
DIODE GEN PURP 800V 1A DO214AA
SSL12
SSL12
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
MUR410GP-TP
MUR410GP-TP
Micro Commercial Co
DIODE GEN PURP 100V 4A DO201AD
V8P8HM3_A/I
V8P8HM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 80V 8A TO277A
S3DB-13
S3DB-13
Diodes Incorporated
DIODE GEN PURP 200V 3A SMB
MBRS360TR
MBRS360TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A SMC
UH6PD-M3/86A
UH6PD-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 6A TO277A
SF10BG-B
SF10BG-B
Diodes Incorporated
DIODE GEN PURP 100V 1A DO41
1T1G R0G
1T1G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A TS-1
JANTX1N3172R
JANTX1N3172R
Microchip Technology
RECTIFIER
Вас также может заинтересовать
G3S06502H
G3S06502H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 2A 2-PIN
G5S12002A
G5S12002A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S06504HT
G5S06504HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S12002C
G3S12002C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S12002D
G3S12002D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S06508D
G3S06508D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G3S06510A
G3S06510A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S06510C
G3S06510C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06508DT
G5S06508DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
GAS06520D
GAS06520D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S12015L
G3S12015L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 3-P
G4S12020PM
G4S12020PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P