G3S12010M

Images are for reference only
See Product Specifications

Mfr. #:

G3S12010M

Mfr.:

Global Power Technology-GPT

Описание:

SIC SCHOTTKY DIODE 1200V 10A 2-P

Упаковка:

Cut Tape (CT)

Datasheet:

G3S12010M Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G3S12010M
Категория:	Discrete Semiconductor Products
Подкатегория:	Diodes - Rectifiers - Single
Производитель:	Global Power Technology-GPT
Упаковка:	Cut Tape (CT)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:	d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):	5837f0fb56ebf31da2ad91bb1de5bb35
Voltage - Forward (Vf) (Max) @ If:	b624027fd8b25f11c8e56782f07f0199
Speed:	4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):	b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:	175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:	dcd54000565bd1139c80ef73b9ee87b8
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:	0b3f3c936192051240c8337b7cfe4c02
Operating Temperature - Junction:	8fc8607d1eb9d0c756392186b450f26c

In Stock: 0

Stock:

0 Can Ship Immediately