G3S12015A

G3S12015A

Images are for reference only
See Product Specifications

G3S12015A
Описание:
SIC SCHOTTKY DIODE 1200V 15A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G3S12015A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S12015A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):4b7015b8d021b470758a812a9b65d05c
Voltage - Forward (Vf) (Max) @ If:a813e37c05f2e088b759552697d82eea
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:778a9b81b2c689e0abb09d6f358c972c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
6A01-G
6A01-G
Comchip Technology
DIODE GEN PURP 100V 6A R6
PU3BFSH
PU3BFSH
Taiwan Semiconductor Corporation
25NS, 3A, 100V, ULTRA FAST RECOV
BAS116T-7-F
BAS116T-7-F
Diodes Incorporated
DIODE GEN PURP 85V 215MA SOT523
EM 1ZV1
EM 1ZV1
Sanken
DIODE GEN PURP 200V 1A AXIAL
SD101AW-G3-18
SD101AW-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 400MW 60V SOD123
SK13-TP
SK13-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 1A DO214AA
1N2252A
1N2252A
Microchip Technology
STD RECTIFIER
VS-31DQ09
VS-31DQ09
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 3.3A C16
MBRB1635HE3/45
MBRB1635HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 16A TO263AB
STTH50W06SW
STTH50W06SW
STMicroelectronics
DIODE GEN PURP 600V 50A TO247
VS-8EWS08STRRPBF
VS-8EWS08STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A D-PAK
RSFKLHRHG
RSFKLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
Вас также может заинтересовать
G3S06512B
G3S06512B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 12A 3-PI
G5S12010BM
G5S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G5S12020BM
G5S12020BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G3S17010B
G3S17010B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 10A 3-P
G3S12030B
G3S12030B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 30A 3-P
G3S06504D
G3S06504D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S06506H
G3S06506H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S12003C
G3S12003C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G4S06515AT
G4S06515AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
G3S06530P
G3S06530P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 2-PI
G5S12020PM
G5S12020PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G4S12020P
G4S12020P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P