G3S12015L

G3S12015L

Images are for reference only
See Product Specifications

G3S12015L
Описание:
SIC SCHOTTKY DIODE 1200V 15A 3-P
Упаковка:
Cut Tape (CT)
Datasheet:
G3S12015L Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G3S12015L
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):12f6c4e84a71d98029de1cc5c5db60d3
Voltage - Forward (Vf) (Max) @ If:a813e37c05f2e088b759552697d82eea
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:778a9b81b2c689e0abb09d6f358c972c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:cb24d8a945145cef1317257ec42e9ef0
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE640
NTE640
NTE Electronics, Inc
R-SCHOTTKY 40V 2A DO214AA
MBRA2H100T3G
MBRA2H100T3G
onsemi
DIODE SCHOTTKY 100V 2A SMA
BAV21WS R9G
BAV21WS R9G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
VS-18TQ035STRLHM3
VS-18TQ035STRLHM3
Vishay General Semiconductor - Diodes Division
SCHOTTKY - D2PAK
UF27520070A1.T1
UF27520070A1.T1
SMC Diode Solutions
PIV 200V IO 90A TRR 70NS CHIP SI
PR6003-T
PR6003-T
Diodes Incorporated
DIODE GEN PURP 200V 6A R6
1N8032-GA
1N8032-GA
GeneSiC Semiconductor
DIODE SCHOTTKY 650V 2.5A TO257
VS-8EWS10STRRPBF
VS-8EWS10STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 8A DPAK
SK32A M2G
SK32A M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO214AC
SF36-TP
SF36-TP
Micro Commercial Co
DIODE GPP HE 3A DO-201AD
JANTXV1N649UR-1/TR
JANTXV1N649UR-1/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
ES3D R6G
ES3D R6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
Вас также может заинтересовать
G3S12004B
G3S12004B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 4A 3-PI
G5S12002C
G5S12002C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S12002H
G5S12002H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S06504CT
G5S06504CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G4S06508CT
G4S06508CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G4S06508QT
G4S06508QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN8*
G3S06510H
G3S06510H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S06510A
G3S06510A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510PT
G5S06510PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12008H
G5S12008H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G3S06510P
G3S06510P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S06520B
G3S06520B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI