G4S06506AT

G4S06506AT

Images are for reference only
See Product Specifications

G4S06506AT
Описание:
SIC SCHOTTKY DIODE 650V 6A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06506AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06506AT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):5041fe682520a40acd22fc2cbe127b4d
Voltage - Forward (Vf) (Max) @ If:54406379b709ccafd8f65fd52d2320a2
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:fdc1ded4066881f04da94d732ba4b8c9
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
S1MDFQ-13
S1MDFQ-13
Diodes Incorporated
DIODE GEN PURP 1KV 1A DFLAT
HS2M
HS2M
SURGE
1.5A -1000V - SMB (DO-214AA) - R
DSDI60-18A
DSDI60-18A
IXYS
DIODE GEN PURP 1.8KV 63A TO247AD
SD103AW-G3-08
SD103AW-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 350MA 40V SOD123
BD1040S_L2_00001
BD1040S_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
1N4448WS-G3-08
1N4448WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
R5001010XXWA
R5001010XXWA
Powerex Inc.
RECTIFIER STUD MOUNT FORWARD DO-
1N4004G-D1-3000
1N4004G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 1A DO41
SIDC53D120H6X1SA3
SIDC53D120H6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
1N4937GPHE3/54
1N4937GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
CD214B-B160LF
CD214B-B160LF
Bourns Inc.
DIODE SCHOTTKY 60V 1A DO214AA
VS-APU3006-F3
VS-APU3006-F3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO247AC
Вас также может заинтересовать
G5S12020B
G5S12020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G3S06504C
G3S06504C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G4S06506CT
G4S06506CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06506C
G3S06506C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S12003H
G3S12003H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G4S06510HT
G4S06510HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S06510M
G3S06510M
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06508CT
G5S06508CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G3S06508J
G3S06508J
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S12005A
G5S12005A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S12005D
G3S12005D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S12015H
G3S12015H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P