G4S06506AT

G4S06506AT

Images are for reference only
See Product Specifications

G4S06506AT
Описание:
SIC SCHOTTKY DIODE 650V 6A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06506AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06506AT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):5041fe682520a40acd22fc2cbe127b4d
Voltage - Forward (Vf) (Max) @ If:54406379b709ccafd8f65fd52d2320a2
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:fdc1ded4066881f04da94d732ba4b8c9
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAW56W/DG/B2115
BAW56W/DG/B2115
NXP USA Inc.
RECTIFIER DIODE
RS2JFS
RS2JFS
Taiwan Semiconductor Corporation
250NS, 2A, 600V, FAST RECOVERY R
FESB8JT-E3/81
FESB8JT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
MBRB1060-E3/45
MBRB1060-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A TO263AB
RURP860_NL
RURP860_NL
Fairchild Semiconductor
RECTIFIER DIODE
SR220
SR220
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 2A DO204AC
MUR4L40
MUR4L40
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
STPS140UY
STPS140UY
STMicroelectronics
DIODE SCHOTTKY 40V 1A SMB
MBR40200PTE3/TU
MBR40200PTE3/TU
Microchip Technology
DIODE SCHOTTKY 40A 200V TO-247AD
1N5712-1E3
1N5712-1E3
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
GPP60GHE3/73
GPP60GHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 6A P600
VS-50WQ06FNTRLPBF
VS-50WQ06FNTRLPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 5.5A DPAK
Вас также может заинтересовать
G5S12040PP
G5S12040PP
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 2-P
G3S06503D
G3S06503D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G3S06506A
G3S06506A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G5S06505CT
G5S06505CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G5S06505DT
G5S06505DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S6508Z
G4S6508Z
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN5*
G4S06510CT
G4S06510CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510QT
G5S06510QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A DFN8
G5S06520AT
G5S06520AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S12015P
G3S12015P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
G3S17005C
G3S17005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI
G3S17005P
G3S17005P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI