G4S06506CT

G4S06506CT

Images are for reference only
See Product Specifications

G4S06506CT
Описание:
SIC SCHOTTKY DIODE 650V 6A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06506CT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06506CT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):fdabb77456fe8f76d1261e74099af715
Voltage - Forward (Vf) (Max) @ If:54406379b709ccafd8f65fd52d2320a2
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:fdc1ded4066881f04da94d732ba4b8c9
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1N4007E-E3/73
1N4007E-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
RS2J-E3/5BT
RS2J-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
SB250_R2_00001
SB250_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
SL13-M3/61T
SL13-M3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 1.5A DO214AC
FR157GH
FR157GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
VSSAF56-M3/6B
VSSAF56-M3/6B
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 5A DO221AC
MUR315S
MUR315S
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
JAN1N6627
JAN1N6627
Microchip Technology
DIODE GEN PURP 440V 1.75A AXIAL
BY229B-600-E3/81
BY229B-600-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
SFF1008GAHC0G
SFF1008GAHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AB
RA257-BP
RA257-BP
Micro Commercial Co
DIODE
JANKCA1N5305
JANKCA1N5305
Microchip Technology
CURRENT REGULATOR
Вас также может заинтересовать
G51XT
G51XT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 1A SOD12
G3S06503C
G3S06503C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G5S12002C
G5S12002C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S12002H
G5S12002H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S12002C
G3S12002C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S06505CT
G5S06505CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S06510HT
G4S06510HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510AT
G5S06510AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G4S12020D
G4S12020D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G3S12020A
G3S12020A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G4S12020PM
G4S12020PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G3S06550P
G3S06550P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 50A 2-PI