G4S06506CT

G4S06506CT

Images are for reference only
See Product Specifications

G4S06506CT
Описание:
SIC SCHOTTKY DIODE 650V 6A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06506CT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06506CT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):fdabb77456fe8f76d1261e74099af715
Voltage - Forward (Vf) (Max) @ If:54406379b709ccafd8f65fd52d2320a2
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:fdc1ded4066881f04da94d732ba4b8c9
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FES16HT-E3/45
FES16HT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 500V 16A TO220AC
ESH2PDHM3/85A
ESH2PDHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO220AA
S5KB-HF
S5KB-HF
Comchip Technology
RECTIFIER GEN PURP 800V 5A SMB
S4PKHM3_A/I
S4PKHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 4A TO277A
GP15B-E3/54
GP15B-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1.5A DO204AC
1N1198R
1N1198R
Microchip Technology
STD RECTIFIER
JANTXV1N6875UTK2
JANTXV1N6875UTK2
Microchip Technology
POWER SCHOTTKY
BYT08PI-400RG
BYT08PI-400RG
STMicroelectronics
DIODE GEN PURP 400V 8A TO220AC
RK 16V1
RK 16V1
Sanken
DIODE SCHOTTKY 60V 2A AXIAL
D770N12TXPSA1
D770N12TXPSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 770A
HER307-TP
HER307-TP
Micro Commercial Co
DIODE GPP HE 3A DO-201AD
RS3J R7
RS3J R7
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
Вас также может заинтересовать
G3S06510B
G3S06510B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 3-PI
G3S12020B
G3S12020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G3S17020B
G3S17020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 20A 3-P
G4S12040BM
G4S12040BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G3S12002D
G3S12002D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S12002H
G3S12002H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S12003H
G3S12003H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G5S06506AT
G5S06506AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06510H
G3S06510H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S6506Z
G5S6506Z
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A DFN5*
G5S12010C
G5S12010C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S065100P
G3S065100P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 100A 2-P