G4S06508JT

G4S06508JT

Images are for reference only
See Product Specifications

G4S06508JT
Описание:
SIC SCHOTTKY DIODE 650V 8A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06508JT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06508JT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):5837f0fb56ebf31da2ad91bb1de5bb35
Voltage - Forward (Vf) (Max) @ If:420d1cc7e890e35ff77da524b4aeb68b
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:149f4aad80de61c605fb3475ce02b574
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:c64d9db24fa4bb215a6b26a947263cd2
Supplier Device Package:e51c8ab5a1ca4c829262cbb350c6493f
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE6358
NTE6358
NTE Electronics, Inc
R-1000PRV 300A CATH CASE
VS-MURB820HM3
VS-MURB820HM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263
MBR30170MFST1G
MBR30170MFST1G
onsemi
170V 30A SCHOTTKY
1N3595UR-1
1N3595UR-1
Microchip Technology
DIODE GEN PURP 125V 150MA DO213
MBRH20040R
MBRH20040R
GeneSiC Semiconductor
DIODE SCHOTTKY 40V 200A D-67
PMEG6010CEGW,115
PMEG6010CEGW,115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY, 1A, 6
1N5818/54
1N5818/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 1A DO204AL
MBRB7H50-E3/45
MBRB7H50-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY TO-263AB
FR155S-TP
FR155S-TP
Micro Commercial Co
DIODE GPP FAST 1.5A DO-41
ESH3D M6
ESH3D M6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
RB058LAM-60TR
RB058LAM-60TR
Rohm Semiconductor
DIODE SCHOTTKY 60V 3A PMDTM
RB160LAM-40TR
RB160LAM-40TR
Rohm Semiconductor
DIODE SCHOTTKY 40V 1A PMDTM
Вас также может заинтересовать
G5S12016B
G5S12016B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
G3S06504H
G3S06504H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G4S06506CT
G4S06506CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S12003A
G3S12003A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G5S06506CT
G5S06506CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G5S06508CT
G5S06508CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06510QT
G5S06510QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A DFN8
G3S12005C
G3S12005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G5S12008A
G5S12008A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G5S12010PM
G5S12010PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12015P
G3S12015P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
G5S12020A
G5S12020A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P