G4S06508QT

G4S06508QT

Images are for reference only
See Product Specifications

G4S06508QT
Описание:
SIC SCHOTTKY DIODE 650V 8A DFN8*
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06508QT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06508QT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):b8e502dae991cece9988e0cce1bf00a2
Voltage - Forward (Vf) (Max) @ If:420d1cc7e890e35ff77da524b4aeb68b
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:149f4aad80de61c605fb3475ce02b574
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:2a68dbff98afc914e78d58b6c5c695d6
Supplier Device Package:0e87dc3104c6908b6ee1c3f8b394e1dd
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAT54W-AU_R1_000A1
BAT54W-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
PMEG6020AELP115
PMEG6020AELP115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BYM11-200-E3/97
BYM11-200-E3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
ACGRC306-HF
ACGRC306-HF
Comchip Technology
DIODE GEN PURP 800V 3A DO214AB
UFS515J/TR13
UFS515J/TR13
Microchip Technology
DIODE GEN PURP 150V 5A DO214AB
US1K-13
US1K-13
Diodes Incorporated
DIODE GEN PURP 800V 1A SMA
SS25SHE3_A/H
SS25SHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 2A DO214AC
SF64GHA0G
SF64GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A DO201AD
D255N02BXPSA1
D255N02BXPSA1
Infineon Technologies
DIODE GEN PURP 200V 255A
FR204-AP
FR204-AP
Micro Commercial Co
DIODE GPP GAST 2A DO-15
XBS013R1DR-G
XBS013R1DR-G
Torex Semiconductor Ltd
SCHOTTKY BARRIER DIODE
RL251
RL251
Rectron USA
DIODE GEN PURP 1000V 2.5A R-3
Вас также может заинтересовать
G5S12016B
G5S12016B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
G4S12020BM
G4S12020BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G5S06504CT
G5S06504CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G4S06508HT
G4S06508HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06506HT
G5S06506HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06505A
G3S06505A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G3S12005H
G3S12005H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S12005A
G3S12005A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G4S06515HT
G4S06515HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
G5S06520AT
G5S06520AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S12015L
G3S12015L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 3-P
G3S17005C
G3S17005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI