G4S06510JT

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Mfr. #:

G4S06510JT

Mfr.:

Global Power Technology-GPT

Описание:

SIC SCHOTTKY DIODE 650V 10A 2-PI

Упаковка:

Cut Tape (CT)

Datasheet:

G4S06510JT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G4S06510JT
Категория:	Discrete Semiconductor Products
Подкатегория:	Diodes - Rectifiers - Single
Производитель:	Global Power Technology-GPT
Упаковка:	Cut Tape (CT)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:	d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):	347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):	3841fa5df5bdc22089b0a51da28dd0ab
Voltage - Forward (Vf) (Max) @ If:	b624027fd8b25f11c8e56782f07f0199
Speed:	4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):	b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:	ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:	6e85b856ebb6eae6a2164e97a051e441
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	c64d9db24fa4bb215a6b26a947263cd2
Supplier Device Package:	e51c8ab5a1ca4c829262cbb350c6493f
Operating Temperature - Junction:	8fc8607d1eb9d0c756392186b450f26c

In Stock: 0

Stock:

0 Can Ship Immediately