G4S06515CT

G4S06515CT

Images are for reference only
See Product Specifications

G4S06515CT
Описание:
SIC SCHOTTKY DIODE 650V 15A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06515CT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06515CT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):41d15e81429c8bc3ef34ded38ebd9cde
Voltage - Forward (Vf) (Max) @ If:a813e37c05f2e088b759552697d82eea
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:2e1a9900a142d5f4ccd2fa1e9088bd05
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
UJ3D1210KSD
UJ3D1210KSD
UnitedSiC
1200V 10A SIC SCHOTTKY DIODE G3,
S1AFL
S1AFL
onsemi
DIODE GP 50V 1A SOD123F
SD350S_S2_00001
SD350S_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
FR105B-G
FR105B-G
Comchip Technology
RECTIFIER FAST RECOVERY 600V 1A
CDBV3-54-HF
CDBV3-54-HF
Comchip Technology
DIODE SCHOTTKY 30V 200MA SOT323
NRVBS230LNT3G
NRVBS230LNT3G
onsemi
DIODE SCHOTTKY 2A 30V SMB2
ESH2PC-M3/84A
ESH2PC-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO220AA
VS-HFA06TB120SR-M3
VS-HFA06TB120SR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 6A D2PAK
1N6622E3/TR
1N6622E3/TR
Microchip Technology
RECTIFIER UFR,FRR
VS-309UA250
VS-309UA250
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2.5KV 300A DO9
RUR1S1560S9A
RUR1S1560S9A
onsemi
15A, 600V, ULTRAFAST DIODE
US1GHR3G
US1GHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
Вас также может заинтересовать
G3S06508B
G3S06508B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 3-PIN
G3S06510B
G3S06510B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 3-PI
G4S06520BT
G4S06520BT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI
G3S06505H
G3S06505H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G3S12002D
G3S12002D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S06510M
G3S06510M
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06508AT
G5S06508AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06506QT
G5S06506QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A DFN8*
G5S12005C
G5S12005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
GAS06520A
GAS06520A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S12010P
G3S12010P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G5S12020A
G5S12020A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P