G4S06515CT

G4S06515CT

Images are for reference only
See Product Specifications

G4S06515CT
Описание:
SIC SCHOTTKY DIODE 650V 15A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06515CT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06515CT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):41d15e81429c8bc3ef34ded38ebd9cde
Voltage - Forward (Vf) (Max) @ If:a813e37c05f2e088b759552697d82eea
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:2e1a9900a142d5f4ccd2fa1e9088bd05
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMEG4002ESFYL
PMEG4002ESFYL
NXP Semiconductors
NEXPERIA PMEG4002ESF - 40 V, 0.2
UPS115UE3/TR7
UPS115UE3/TR7
Microchip Technology
DIODE SCHOTTKY 15V 1A POWERMITE
TST30L45CW
TST30L45CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A TO220AB
ES3B
ES3B
onsemi
DIODE GEN PURP 100V 3A SMC
VS-16F60
VS-16F60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 16A DO203AA
31GF4-E3/54
31GF4-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO201AD
V15P15HM3/I
V15P15HM3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150V 15A TO277A
SF808G
SF808G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AB
GAS06520L
GAS06520L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI
FR304
FR304
SMC Diode Solutions
DIODE GEN PURP 400V 3A DO201AD
IRD3CH9DD6
IRD3CH9DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
BAX12 BK
BAX12 BK
Central Semiconductor Corp
DIODE
Вас также может заинтересовать
G5S12016BM
G5S12016BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
G5S12002H
G5S12002H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S06506C
G3S06506C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G5S06505DT
G5S06505DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S06508DT
G4S06508DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06506HT
G5S06506HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G4S06510AT
G4S06510AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S06510C
G3S06510C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12008A
G5S12008A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
GAS06520P
GAS06520P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G5S06520AT
G5S06520AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G5S12020PM
G5S12020PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P