G4S06515DT

G4S06515DT

Images are for reference only
See Product Specifications

G4S06515DT
Описание:
SIC SCHOTTKY DIODE 650V 15A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06515DT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06515DT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):6e84fd2fd642b2a61415ff69a3ae1ad3
Voltage - Forward (Vf) (Max) @ If:a813e37c05f2e088b759552697d82eea
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:2e1a9900a142d5f4ccd2fa1e9088bd05
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HER108G A0G
HER108G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
RURD660S-SB82214
RURD660S-SB82214
Fairchild Semiconductor
6A, 600V ULTRAFAST DIODE
PMEG2005EPK,315
PMEG2005EPK,315
Nexperia USA Inc.
DIODE SCHOT 20V 500MA DFN1608D-2
BAL99W_R1_00001
BAL99W_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
PSDH60120S1_T0_00001
PSDH60120S1_T0_00001
Panjit International Inc.
TO-247AD-2LD, FAST
BYM11-50-E3/97
BYM11-50-E3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO213AB
RM 11BV1
RM 11BV1
Sanken
DIODE GEN PURP 800V 1.2A AXIAL
S43130
S43130
Microchip Technology
STD RECTIFIER
LLSD101B-7
LLSD101B-7
Diodes Incorporated
DIODE SCHOTTKY 50V 15MA MINIMELF
S5G R7G
S5G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
FR156G B0G
FR156G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
SS310 M6
SS310 M6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
Вас также может заинтересовать
G3S06510B
G3S06510B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 3-PI
G5S12010BM
G5S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G3S12020B
G3S12020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G3S06503D
G3S06503D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G3S12003H
G3S12003H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G3S12005A
G3S12005A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G4S06515AT
G4S06515AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
G4S06515HT
G4S06515HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
G3S12010D
G3S12010D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12010P
G3S12010P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S17005C
G3S17005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI
G4S12020A
G4S12020A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P