G4S06515DT

G4S06515DT

Images are for reference only
See Product Specifications

G4S06515DT
Описание:
SIC SCHOTTKY DIODE 650V 15A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G4S06515DT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S06515DT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):6e84fd2fd642b2a61415ff69a3ae1ad3
Voltage - Forward (Vf) (Max) @ If:a813e37c05f2e088b759552697d82eea
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:2e1a9900a142d5f4ccd2fa1e9088bd05
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS116LPH4-7B
BAS116LPH4-7B
Diodes Incorporated
DIODE GEN PURP 85V 215MA 2DFN
SBT1090
SBT1090
Diotec Semiconductor
SCHOTTKY TO-220AC 90V 10A
NTE6111
NTE6111
NTE Electronics, Inc
R-600PRV 1100A
HER201G-TP
HER201G-TP
Micro Commercial Co
DIODE GPP HE 2A DO-15
SE10DDHM3/I
SE10DDHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A TO263AC
S25K
S25K
GeneSiC Semiconductor
DIODE GEN PURP 800V 25A DO203AA
JAN1N5195US/TR
JAN1N5195US/TR
Microchip Technology
SIGNAL OR COMPUTER DIODE
VS-150UR60D
VS-150UR60D
Vishay General Semiconductor - Diodes Division
DIODE GP 600V 150A DO-8
UES1306HR2
UES1306HR2
Microchip Technology
RECTIFIER
VS-1N3209R
VS-1N3209R
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 15A DO203AB
ES2AHE3/5BT
ES2AHE3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 2A DO214AA
ES1AH
ES1AH
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
Вас также может заинтересовать
G3S06516B
G3S06516B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 16A 3-PI
G5S12010BM
G5S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G5S12030BM
G5S12030BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 30A 3-P
G5S12040B
G5S12040B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G3S06503H
G3S06503H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G3S12002H
G3S12002H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S06510C
G3S06510C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12008H
G5S12008H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G3S06510P
G3S06510P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S12010P
G3S12010P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12020P
G3S12020P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G3S12050P
G3S12050P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 50A 2-P