G4S12010PM

G4S12010PM

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G4S12010PM
Описание:
SIC SCHOTTKY DIODE 1200V 10A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G4S12010PM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S12010PM
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):9cf9d91a7770ef889df64ff64156bb46
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:4cebb8a855ecdc9eee923e46736799b2
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d2aad78b602e79a43955ea20f9b47d9e
Supplier Device Package:ff15466ab005cbc6ba41396649fce236
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
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