G4S12010PM

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See Product Specifications

Mfr. #:

G4S12010PM

Mfr.:

Global Power Technology-GPT

Описание:

SIC SCHOTTKY DIODE 1200V 10A 2-P

Упаковка:

Cut Tape (CT)

Datasheet:

G4S12010PM Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	G4S12010PM
Категория:	Discrete Semiconductor Products
Подкатегория:	Diodes - Rectifiers - Single
Производитель:	Global Power Technology-GPT
Упаковка:	Cut Tape (CT)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:	d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):	9cf9d91a7770ef889df64ff64156bb46
Voltage - Forward (Vf) (Max) @ If:	336d5ebc5436534e61d16e63ddfca327
Speed:	4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):	b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:	4cebb8a855ecdc9eee923e46736799b2
Capacitance @ Vr, F:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	d2aad78b602e79a43955ea20f9b47d9e
Supplier Device Package:	ff15466ab005cbc6ba41396649fce236
Operating Temperature - Junction:	8fc8607d1eb9d0c756392186b450f26c

In Stock: 0

Stock:

0 Can Ship Immediately