G4S12020BM

G4S12020BM

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G4S12020BM
Описание:
SIC SCHOTTKY DIODE 1200V 20A 3-P
Упаковка:
Cut Tape (CT)
Datasheet:
G4S12020BM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S12020BM
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Arrays
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Configuration:1f381491ec259630d231305cac2dda5c
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io) (per Diode):9cf9d91a7770ef889df64ff64156bb46
Voltage - Forward (Vf) (Max) @ If:2d2f4582484ef955747986b021e8f2b1
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:8d631358235e75f0d6007fb95efd8442
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:cb24d8a945145cef1317257ec42e9ef0
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
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