G4S12020P

G4S12020P

Images are for reference only
See Product Specifications

G4S12020P
Описание:
SIC SCHOTTKY DIODE 1200V 20A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G4S12020P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G4S12020P
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):d61e5b55b8b53e1184341bb9a19ebfd0
Voltage - Forward (Vf) (Max) @ If:7cc1c03b17cd8ed426ab750c60ad2642
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:24a54caaa03859b2144b0d146935af7c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d2aad78b602e79a43955ea20f9b47d9e
Supplier Device Package:ff15466ab005cbc6ba41396649fce236
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
UJ3D06506TS
UJ3D06506TS
UnitedSiC
650V 6A SIC SCHOTTKY DIODE G3, T
FR207GB-G
FR207GB-G
Comchip Technology
RECTIFIER FAST RECOVERY 1000V 2A
VS-12TQ035STRL-M3
VS-12TQ035STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 15A D2PAK
VS-30ETH06S-M3
VS-30ETH06S-M3
Vishay General Semiconductor - Diodes Division
DIODE ULTRA FAST 600V 30A D2PAK
S30440
S30440
Microchip Technology
RECTIFIER
S42100TS
S42100TS
Microchip Technology
RECTIFIER
P3D06020I2
P3D06020I2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 20A TO220I-2
SS13L RHG
SS13L RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
SFF1004GHC0G
SFF1004GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A ITO220AB
SR1203HB0G
SR1203HB0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 12A DO201AD
RB050LAM-30TFTR
RB050LAM-30TFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD
RLS4150TE-11
RLS4150TE-11
Rohm Semiconductor
DIODE GEN PURP 50V 200MA LLDS
Вас также может заинтересовать
G3S06540B
G3S06540B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 40A 3-PI
G3S06502H
G3S06502H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 2A 2-PIN
G3S06504H
G3S06504H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S06504A
G3S06504A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G4S06506CT
G4S06506CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G4S06510JT
G4S06510JT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510AT
G5S06510AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12005D
G5S12005D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S12010C
G3S12010C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G4S12010PM
G4S12010PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12015P
G3S12015P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
G3S12015L
G3S12015L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 3-P