G5S06502AT

G5S06502AT

Images are for reference only
See Product Specifications

G5S06502AT
Описание:
SIC SCHOTTKY DIODE 650V 2A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G5S06502AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S06502AT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):d0c55c8773153f208946b7a08f4383c7
Voltage - Forward (Vf) (Max) @ If:8647c4e0934fa493c6c7814e981cf83a
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:c6baa251d0913d43839f0bd1f9e26312
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
ESH1C R3G
ESH1C R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
SB240E-G
SB240E-G
Comchip Technology
DIODE SCHOTTKY 40V 2A DO15
SS0140Q_R1_00001
SS0140Q_R1_00001
Panjit International Inc.
DFN0603-2L, SKY
BYV26EGP-E3/54
BYV26EGP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AC
BAV203-GS18
BAV203-GS18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD80
HS1KLW RVG
HS1KLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SOD123W
SJPB-L6V
SJPB-L6V
Sanken
DIODE SCHOTTKY 60V 3A SJP
RS1B-13
RS1B-13
Diodes Incorporated
DIODE GEN PURP 100V 1A SMA
SBLB10L25HE3/81
SBLB10L25HE3/81
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 25V 10A TO263AB
EGP10FE-M3/73
EGP10FE-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO204AL
RB060M-30DDTR
RB060M-30DDTR
Rohm Semiconductor
DIODE SCHOTTKY 30V 2A PMDU
Вас также может заинтересовать
G5S12040PP
G5S12040PP
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 2-P
G5S12040B
G5S12040B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G3S06504D
G3S06504D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S06504H
G3S06504H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G5S06505DT
G5S06505DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G3S06508C
G3S06508C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06505A
G3S06505A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S06510JT
G4S06510JT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S06510DT
G5S06510DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S12005C
G3S12005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G3S06520P
G3S06520P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S17005A
G3S17005A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI