G5S06502AT

G5S06502AT

Images are for reference only
See Product Specifications

G5S06502AT
Описание:
SIC SCHOTTKY DIODE 650V 2A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G5S06502AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S06502AT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):d0c55c8773153f208946b7a08f4383c7
Voltage - Forward (Vf) (Max) @ If:8647c4e0934fa493c6c7814e981cf83a
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:c6baa251d0913d43839f0bd1f9e26312
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
DNA30E2200PZ-TRL
DNA30E2200PZ-TRL
IXYS
DIODE GEN PURP 2.2KV 30A TO263
SR105
SR105
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 1A 50V DO-41
ES2DHM3_A/H
ES2DHM3_A/H
Vishay General Semiconductor - Diodes Division
2A 200V SM ULTRAFAST RECT SMB
V10PM15HM3/I
V10PM15HM3/I
Vishay General Semiconductor - Diodes Division
RECTIFIER BARRIER SCHOTTKY TO-27
DLA10IM800UC-TUB
DLA10IM800UC-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
M20
M20
Semtech Corporation
DIODE GEN PURP 2KV 330MA AXIAL
R31160
R31160
Microchip Technology
STD RECTIFIER
JANS1N5712UR-1/TR
JANS1N5712UR-1/TR
Microchip Technology
SMALL-SIGNAL SCHOTTKY
RGL41MHE3/96
RGL41MHE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
UG15HT-E3/45
UG15HT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 500V 15A TO220AC
RS1DL M2G
RS1DL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
VS-95-9929PBF
VS-95-9929PBF
Vishay General Semiconductor - Diodes Division
DIODE GENERAL PURPOSE TO220
Вас также может заинтересовать
G3S06506B
G3S06506B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 3-PIN
G5S12020BM
G5S12020BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G3S06503A
G3S06503A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G3S06505H
G3S06505H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G5S06505CT
G5S06505CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G3S06508A
G3S06508A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06510AT
G5S06510AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G3S12005C
G3S12005C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
G4S06515AT
G4S06515AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
GAS06520L
GAS06520L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI
GAS06520A
GAS06520A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
G3S06520P
G3S06520P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI