G5S06504HT

G5S06504HT

Images are for reference only
See Product Specifications

G5S06504HT
Описание:
SIC SCHOTTKY DIODE 650V 4A 2-PIN
Упаковка:
Cut Tape (CT)
Datasheet:
G5S06504HT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S06504HT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):1ef00e7b48a8512307b3dac60d074552
Voltage - Forward (Vf) (Max) @ If:c10f8082f8f42bc01fb999402b192f38
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:fdc1ded4066881f04da94d732ba4b8c9
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1dd495d5dc873ac626fdae7730f9147f
Supplier Device Package:0b3f3c936192051240c8337b7cfe4c02
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
CMF04(TE12L,Q,M)
CMF04(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 800V 500MA MFLAT
SBR0240LPWQ-7B
SBR0240LPWQ-7B
Diodes Incorporated
SBR DIODE X1-DFN1006-2/SWP T&R 1
CLL4150 BK PBFREE
CLL4150 BK PBFREE
Central Semiconductor Corp
DIODE GEN PURP 50V 300MA SOD80
SDM4A40EP3-7B
SDM4A40EP3-7B
Diodes Incorporated
SCHOTTKY RECTIFIER X3-TSN1608-2
GP10-4003E-E3/54
GP10-4003E-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
UFS160G/TR13
UFS160G/TR13
Microchip Technology
UFR,FRR
VS-85HFLR10S02M
VS-85HFLR10S02M
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 85A DO203AB
G3S12003A
G3S12003A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
8EWS16S
8EWS16S
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 8A DPAK
STTA1512PIRG
STTA1512PIRG
STMicroelectronics
DIODE GEN PURP 1.2KV 15A DOP3I
S4K R6G
S4K R6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
RB080LAM-30TFTR
RB080LAM-30TFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD
Вас также может заинтересовать
G4S06516BT
G4S06516BT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 16A 3-PI
G3S12020B
G3S12020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G5S12040BM
G5S12040BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G5S06504CT
G5S06504CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 2-PIN
G3S12002D
G3S12002D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S06506H
G3S06506H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06508C
G3S06508C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G4S06510HT
G4S06510HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
G5S12008D
G5S12008D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G4S06515PT
G4S06515PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
GAS06520L
GAS06520L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 3-PI
GAS06520H
GAS06520H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI