G5S06510AT

G5S06510AT

Images are for reference only
See Product Specifications

G5S06510AT
Описание:
SIC SCHOTTKY DIODE 650V 10A 2-PI
Упаковка:
Cut Tape (CT)
Datasheet:
G5S06510AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S06510AT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):730042423d1416d4c458f2ee230d4812
Voltage - Forward (Vf) (Max) @ If:0b7dc2c360fcaeec3fd070d376b8c97a
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:2e1a9900a142d5f4ccd2fa1e9088bd05
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAT42WS-AU_R1_000A1
BAT42WS-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
1N4448WS RRG
1N4448WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
LL103B-GS18
LL103B-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
S5MS-E3/57T
S5MS-E3/57T
Vishay General Semiconductor - Diodes Division
DIODE GP 1KV 1.6A DO214AB
ESH1PCHM3/85A
ESH1PCHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO220AA
VB10150S-E3/4W
VB10150S-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150V 10A TO263AB
1N2159R
1N2159R
Solid State Inc.
DO5 40 AMP SILICON RECTFIER
DGP30HE3/54
DGP30HE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.5KV 3A DO201AD
SIDC08D120H8X1SA1
SIDC08D120H8X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 150A WAFER
SR509 R0G
SR509 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 5A DO201AD
SS23LHR3G
SS23LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A SUB SMA
FR2D-TP
FR2D-TP
Micro Commercial Co
DIODE 2A 200V SMB DO-214AA
Вас также может заинтересовать
G3S06508B
G3S06508B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 3-PIN
G3S12010B
G3S12010B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G5S12020B
G5S12020B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
G5S06502AT
G5S06502AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 2A 2-PIN
G3S06506C
G3S06506C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06505C
G3S06505C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G4S06508HT
G4S06508HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06506DT
G5S06506DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G5S06508PT
G5S06508PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S12008C
G5S12008C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G5S12010D
G5S12010D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S06530P
G3S06530P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 2-PI