G5S12010A

G5S12010A

Images are for reference only
See Product Specifications

G5S12010A
Описание:
SIC SCHOTTKY DIODE 1200V 10A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G5S12010A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S12010A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):f3d0fdee66ced3a53213a7bd95950241
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
F1200A
F1200A
Diotec Semiconductor
DIODE FR D8X7.5 50V 12A
DD400S17K4C
DD400S17K4C
Infineon Technologies
RECTIFIER DIODE MODULE
HER103BULK
HER103BULK
EIC SEMICONDUCTOR INC.
DIODE GEN PURP 200V 1A DO41
SS1P4L-M3/84A
SS1P4L-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1.5A DO220AA
JANHCA1N6761
JANHCA1N6761
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
S42100TS
S42100TS
Microchip Technology
RECTIFIER
VS-SD300C16C
VS-SD300C16C
Vishay General Semiconductor - Diodes Division
DIODE GP 1.6KV 650A DO200AA
SIDC08D60C6
SIDC08D60C6
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
SS3P4HE3/85A
SS3P4HE3/85A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DO220AA
F1T7G A0G
F1T7G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A TS-1
VS-80-1336PBF
VS-80-1336PBF
Vishay General Semiconductor - Diodes Division
DIODE GENERAL PURPOSE TO220
RB520S-309HNTE61
RB520S-309HNTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
Вас также может заинтересовать
G3S06560B
G3S06560B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 3-PIN
G51XT
G51XT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 1A SOD12
G3S06503D
G3S06503D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G3S12003C
G3S12003C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
G4S06508AT
G4S06508AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G5S06506DT
G5S06506DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G5S06508QT
G5S06508QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN8*
G4S06510QT
G4S06510QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A DFN8
G4S06515CT
G4S06515CT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
G5S12008PM
G5S12008PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G4S12020D
G4S12020D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G5S12020PM
G5S12020PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P