G5S12010D

G5S12010D

Images are for reference only
See Product Specifications

G5S12010D
Описание:
SIC SCHOTTKY DIODE 1200V 10A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G5S12010D Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S12010D
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):f1d7252ed9160212d1c61d0431475993
Voltage - Forward (Vf) (Max) @ If:b624027fd8b25f11c8e56782f07f0199
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:45712b91272b267eb97912b74502b3c2
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RS2J-13-F
RS2J-13-F
Diodes Incorporated
DIODE GEN PURP 600V 1.5A SMB
RS2GAL
RS2GAL
Taiwan Semiconductor Corporation
150NS, 2A, 400V, FAST RECOVERY R
SS1040HE_R1_00001
SS1040HE_R1_00001
Panjit International Inc.
SOD-123HE, SKY
VS-25F40
VS-25F40
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 25A DO203AA
US1JFL-TP
US1JFL-TP
Micro Commercial Co
DIODE GEN PURP 600V 1A DO221AC
CMS02(TE12L)
CMS02(TE12L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 3A MFLAT
BAS5202VE6127XT
BAS5202VE6127XT
Infineon Technologies
DIODE SCHOTTKY 45V 750MA SC79-2
S1BLHMTG
S1BLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
SF3004PTHC0G
SF3004PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 30A TO247AD
HER307G B0G
HER307G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
CMG05(TE12L,Q,M)
CMG05(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A M-FLAT
VS-80-1309PBF
VS-80-1309PBF
Vishay General Semiconductor - Diodes Division
DIODE GENERAL PURPOSE TO220
Вас также может заинтересовать
G5S12010BM
G5S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G4S12040BM
G4S12040BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G3S06503H
G3S06503H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G3S12002C
G3S12002C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G5S06505HT
G5S06505HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
G5S06508HT
G5S06508HT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
G4S06515PT
G4S06515PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 15A 2-PI
G4S12010PM
G4S12010PM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G3S12015L
G3S12015L
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 3-P
G3S12020P
G3S12020P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
G3S17005P
G3S17005P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 5A 2-PI
G3S17010A
G3S17010A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1700V 10A 2-P