G5S12020PM

G5S12020PM

Images are for reference only
See Product Specifications

G5S12020PM
Описание:
SIC SCHOTTKY DIODE 1200V 20A 2-P
Упаковка:
Cut Tape (CT)
Datasheet:
G5S12020PM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G5S12020PM
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Global Power Technology-GPT
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):9563f55a01ecbad9ba896e5216ca5198
Voltage - Forward (Vf) (Max) @ If:7cc1c03b17cd8ed426ab750c60ad2642
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:f388f8f6736f5218bbd6063e01ce561e
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d2aad78b602e79a43955ea20f9b47d9e
Supplier Device Package:ff15466ab005cbc6ba41396649fce236
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BYC8X-600,127
BYC8X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220FP
HER306BULK
HER306BULK
EIC SEMICONDUCTOR INC.
DIODE GEN PURP 600V 3A DO201AD
PMEG4005AEA,115
PMEG4005AEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323
RHRG75120
RHRG75120
onsemi
DIODE GEN PURP 1200V 75A TO247-2
RHRG5060-F085
RHRG5060-F085
onsemi
DIODE GEN PURP 600V 50A TO247
FRS1ME-7
FRS1ME-7
Diodes Incorporated
RAPID GPP RECTIFIER DO-219AA T&R
V20PW15HM3/I
V20PW15HM3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150V 20A SLIMDPAK
VS-8EWF04STRL-M3
VS-8EWF04STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A D-PAK
1N6778
1N6778
Microchip Technology
RECTIFIER DIODE
HFA06PB120
HFA06PB120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 6A TO247AC
UH3C-M3/57T
UH3C-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2.5A DO214AB
HS2BA M2G
HS2BA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO214AC
Вас также может заинтересовать
G5S12010BM
G5S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G3S12010BM
G3S12010BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 3-P
G5S12040B
G5S12040B
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G4S12040BM
G4S12040BM
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
G3S06503D
G3S06503D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
G5S12002C
G5S12002C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
G3S06506H
G3S06506H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G3S06508C
G3S06508C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
G5S06508QT
G5S06508QT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A DFN8*
G5S12008C
G5S12008C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 8A 2-PI
G5S12010D
G5S12010D
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
G4S12020A
G4S12020A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P