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See Product Specifications
| номер части: | GE10022 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Harris Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | 581e296bcea74c29498390ed7d157f7a |
| Voltage - Collector Emitter Breakdown (Max): | f0e42d4fe3be62b192373a4db06f867f |
| Vce Saturation (Max) @ Ib, Ic: | 32d4ae96465c0102184b223caad6a43e |
| Current - Collector Cutoff (Max): | 46edd5ae522cf8200c3a6a6618199c9a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 55c74e7b1e03979996d2233a3efcf909 |
| Power - Max: | 919b6817f7a1d97dc672009d630453af |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 43d6c0a72e431ca25a20b9c2b753c6fb |
| Supplier Device Package: | 43d6c0a72e431ca25a20b9c2b753c6fb |
