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See Product Specifications
| номер части: | GES5816 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Harris Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | c45bee42534dadb2ff59870cb226886b |
| Voltage - Collector Emitter Breakdown (Max): | 628cbc3e45d5bacb32414a526acf56ef |
| Vce Saturation (Max) @ Ib, Ic: | 3abfb4410a413316cc8beb212b1a2a35 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | aa4a2c776be29deaa7b46db112569282 |
| Power - Max: | 518423de9d41db9800c9bf822055b790 |
| Frequency - Transition: | f5180f0d81e089faea7622ec0b7d7b0d |
| Operating Temperature: | 740a07c190947301613e630070130d92 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
| Supplier Device Package: | 2f84ada388e0516613ee9bf116b4e076 |
