HGT4E30N60C3S

HGT4E30N60C3S

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HGT4E30N60C3S
Описание:
IGBT 60A, 600V, N CHANNEL, TO 26
Упаковка:
Bulk
Datasheet:
HGT4E30N60C3S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HGT4E30N60C3S
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):336d5ebc5436534e61d16e63ddfca327
Vce Saturation (Max) @ Ib, Ic:336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:336d5ebc5436534e61d16e63ddfca327
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 750
Stock:
750 Can Ship Immediately
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