HGTG2ON60C3DR

HGTG2ON60C3DR

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See Product Specifications

HGTG2ON60C3DR
Описание:
40A, 600V, RUGGED UFS SERIES N C
Упаковка:
Bulk
Datasheet:
HGTG2ON60C3DR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HGTG2ON60C3DR
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):336d5ebc5436534e61d16e63ddfca327
Current - Collector Pulsed (Icm):336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:336d5ebc5436534e61d16e63ddfca327
Power - Max:336d5ebc5436534e61d16e63ddfca327
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:336d5ebc5436534e61d16e63ddfca327
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 302
Stock:
302 Can Ship Immediately
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