HGTG32N60E2

HGTG32N60E2

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See Product Specifications

HGTG32N60E2
Описание:
50A, 600V N-CHANNEL IGBT
Упаковка:
Bulk
Datasheet:
HGTG32N60E2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HGTG32N60E2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):80048aebe005b9413929a11bba83f563
Current - Collector Pulsed (Icm):63d19bd379a172e83028b5a9b57fac7b
Vce(on) (Max) @ Vge, Ic:dae5b5b1e973effb1fe99a78313693c3
Power - Max:6b665f4f861d0fb4017221f5358aa677
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:9b627eb003b1fb6205ec164a112b22b8
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:566bc0f44c33782e0104763798b071ab
In Stock: 2969
Stock:
2969 Can Ship Immediately
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