IRFD9110

IRFD9110

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See Product Specifications

IRFD9110
Описание:
0.7A 100V 1.200 OHM P-CHANNEL
Упаковка:
Bulk
Datasheet:
IRFD9110 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IRFD9110
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:536c4c20cb2fb8e9f0855c4c82bfb110
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f4db31262d2e94ba07c445391f8cfc3c
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:9662efe58207d2298e219fe8da42a3f1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:90b171b4d5d478e59c7d55ce783242a9
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):be803bd4e0936fd755166f5b6f8436f1
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:7c21fb2d1debfe859db13ad11cc3c6d5
Package / Case:a2d0b03799f1d6ee421dac71d89b1604
In Stock: 16818
Stock:
16818 Can Ship Immediately
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