RF1S630SM9A

RF1S630SM9A

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RF1S630SM9A
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
RF1S630SM9A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RF1S630SM9A
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:ff2da2e5c593aab4d0b1e137db724b7a
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:0a620c956537c1262ef6fd4030a57367
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:39352bee88f42a0566529683068d49d4
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:51933c102a019b2add10cdf6dd81db6b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):fc68e31357073b0dee08946ec891c227
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ca9050860f61b7f156a477795e7299d5
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 4000
Stock:
4000 Can Ship Immediately
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