RFD3N08LSM9A

RFD3N08LSM9A

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RFD3N08LSM9A
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
RFD3N08LSM9A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RFD3N08LSM9A
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:f5471b3e019830b8910e32dfcbdd5756
Drive Voltage (Max Rds On, Min Rds On):ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:4f7d1c10a425596088ee378916f435d8
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:1117969048fd46cd0783f40000a0b323
Vgs (Max):10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:33d3470a2f82bc58ca5fa20fdcccb508
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6395095cf5d045979816b63506fbde01
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:4f5b86000f3ff8c6dc64a1a230413ded
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 2425
Stock:
2425 Can Ship Immediately
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