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See Product Specifications
| номер части: | RFD7N10LE |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Harris Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 3d28ab81c1ea57e4bc54bda355458666 |
| Drive Voltage (Max Rds On, Min Rds On): | ca780190014b60ca18e65ea3a5bdf39b |
| Rds On (Max) @ Id, Vgs: | 928e11a14e50bca8ebd73d791ad83cce |
| Vgs(th) (Max) @ Id: | 47646805bddee9d06a7f0cc80c73c037 |
| Gate Charge (Qg) (Max) @ Vgs: | 789bf5e31e323fc83c66ab09e5c299d7 |
| Vgs (Max): | 775770fee9b1d7a7b5f2a66405bb287d |
| Input Capacitance (Ciss) (Max) @ Vds: | ecdfc826c64864ae5c9be159b1bbb872 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 1b00be064f312236ac8e397b850a5a63 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 46bb638de2ea693de650d7f1c3115468 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
