ALD1110EPAL

Images are for reference only
See Product Specifications

Mfr. #:

ALD1110EPAL

Mfr.:

Advanced Linear Devices Inc.

Описание:

MOSFET 2N-CH 10V 8DIP

Упаковка:

Tube

Datasheet:

ALD1110EPAL Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	ALD1110EPAL
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Arrays
Производитель:	Advanced Linear Devices Inc.
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	b007daf473661417b7063971ec7f26cf
FET Feature:	eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):	76f7bec4411c6fbb49ed5d21d8974faf
Current - Continuous Drain (Id) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	0672440c2f66b144bec1e70d220f0e8d
Vgs(th) (Max) @ Id:	1580b39b3b06a371aaa0b82ed3c7f177
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	76b41f1e425644096994006ab1b9044f
Power - Max:	1e70d8133bc22fdd0b71be93e7cf7b25
Operating Temperature:	69dfe98431cccdf0886d36b96fef82c7
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	9f3645a5640113b67f8aa0e4718d295c
Supplier Device Package:	50f50b7d6fdb84f518788af7ac392fba

In Stock: 0

Stock:

0 Can Ship Immediately