1N4004L-T

1N4004L-T

Images are for reference only
See Product Specifications

1N4004L-T
Описание:
DIODE GEN PURP 400V 1A DO41
Упаковка:
Tape & Reel (TR)
Datasheet:
1N4004L-T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N4004L-T
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):a51e6c3b115ead349deb13cbf5a43f23
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:1b24f38bdfd661e26937a14d6ddb7cc1
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:eea8703a936f4d10e45752881a22d5be
Capacitance @ Vr, F:27522d49b761171178b4cffe18b14a32
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:b318f38b1083e81282352a6a05a1af0e
Operating Temperature - Junction:65170ef500fce04c4d928fa302cdc403
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
US1G-E3/5AT
US1G-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AC
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
VS-20BQ030HM3/5BT
VS-20BQ030HM3/5BT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 2A DO214AA
STTH803G-TR
STTH803G-TR
STMicroelectronics
DIODE GEN PURP 300V 8A D2PAK
LS4154GS08
LS4154GS08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 25V 150MA SOD80
DPG30I300HA
DPG30I300HA
IXYS
DIODE GEN PURP 300V 30A TO247
JANTXV1N5417US/TR
JANTXV1N5417US/TR
Microchip Technology
RECTIFIER UFR,FRR
ES2C-13
ES2C-13
Diodes Incorporated
DIODE GEN PURP 150V 2A SMB
30CPF04
30CPF04
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 30A TO247AC
CD214A-R11600
CD214A-R11600
Bourns Inc.
DIODE GEN PURP 1.6KV 1A DO214AC
S1DLHR3G
S1DLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
RS3K R6
RS3K R6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
Вас также может заинтересовать
SMAJ70CA-13-F
SMAJ70CA-13-F
Diodes Incorporated
TVS DIODE 70VWM 113VC SMA
SMCJ48CAQ-13-F
SMCJ48CAQ-13-F
Diodes Incorporated
TVS DIODE 48VWM 77.4VC SMC
GL2210002
GL2210002
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
G93270002
G93270002
Diodes Incorporated
CRYSTAL 32.7680KHZ 12.5PF SMD
UX52F62010
UX52F62010
Diodes Incorporated
XTAL OSC XO 156.2500MHZ LVPECL
GBJS4010
GBJS4010
Diodes Incorporated
MEDIUM/HIGH POWER BRIDGE GBJS TU
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
S3DB-13
S3DB-13
Diodes Incorporated
DIODE GEN PURP 200V 3A SMB
BZX84C11-7
BZX84C11-7
Diodes Incorporated
DIODE ZENER 11V 300MW SOT23-3
BFQ31ATC
BFQ31ATC
Diodes Incorporated
RF TRANS NPN 15V 600MHZ SOT23-3
74AUP2G14FW4-7
74AUP2G14FW4-7
Diodes Incorporated
IC INVERTER 2CH 2-INP DFN1010-6
PI5PD2061WEX
PI5PD2061WEX
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8SOIC