B330B-13

B330B-13

Images are for reference only
See Product Specifications

B330B-13
Описание:
DIODE SCHOTTKY 30V 3A SMB
Упаковка:
Tape & Reel (TR)
Datasheet:
B330B-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:B330B-13
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):6f065265b5ad79aa8b78335bb14c6420
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:bd38322a96a8487195254a66cf5a3a69
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:bbe2fa7d782a0ce705190a0dd8cea133
Capacitance @ Vr, F:8325f87f915aaca1cd64072c93114063
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:38894d8db4510f24855cf840455e79c1
Supplier Device Package:b4fdd997b1f33e0d4c6964444c2bf399
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ES3B-E3/57T
ES3B-E3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO214AB
NTE120
NTE120
NTE Electronics, Inc
DIODE GEN PURP 10V 65MA 7SIP
SD103BW-E3-08
SD103BW-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 350MA 30V SOD123
GS1GDWG_R1_00001
GS1GDWG_R1_00001
Panjit International Inc.
SURFACE MOUNT GENERAL PURPOSE RE
HER108G-TP
HER108G-TP
Micro Commercial Co
DIODE GPP HE 1A DO-41
VS-8ETL06-1-M3
VS-8ETL06-1-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO262
DGS10-030A
DGS10-030A
IXYS
DIODE SCHOTTKY 300V 11A TO220AC
MBRH15030L
MBRH15030L
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 150A D-67
PR1505S-B
PR1505S-B
Diodes Incorporated
DIODE GEN PURP 600V 1.5A DO41
GPA804HC0G
GPA804HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
D251N12BXPSA1
D251N12BXPSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 255A
US1AH
US1AH
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
Вас также может заинтересовать
SMF4L15CAQ-7
SMF4L15CAQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FH1600022
FH1600022
Diodes Incorporated
CRYSTAL 16.0000MHZ 8PF SMD
PB5000008
PB5000008
Diodes Incorporated
XTAL OSC XO 50.0000MHZ PECL SMD
BAS40-7
BAS40-7
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
BZT52C7V5T-7
BZT52C7V5T-7
Diodes Incorporated
DIODE ZENER 7.5V 300MW SOD523
BZX84C24-7-G
BZX84C24-7-G
Diodes Incorporated
DIODE ZENER
DMN10H220LFDF-7
DMN10H220LFDF-7
Diodes Incorporated
MOSFET BVDSS: 61V~100V U-DFN2020
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
PI6CL10804WE
PI6CL10804WE
Diodes Incorporated
IC CLK BUFFER 1:4 140MHZ 8COIC
PI3WVR31212AZLEX
PI3WVR31212AZLEX
Diodes Incorporated
IC MUX/DEMUX 2:1 DP/HDMI 60TQFN
PI4ULS5V108Q1LEX
PI4ULS5V108Q1LEX
Diodes Incorporated
INTERFACE ULS TSSOP-20
AUR9718AUGD
AUR9718AUGD
Diodes Incorporated
IC REG BUCK ADJUSTABLE 1.5A 6DFN