BAS16W-7-F

BAS16W-7-F

Images are for reference only
See Product Specifications

BAS16W-7-F
Описание:
DIODE GEN PURP 75V 150MA SOT323
Упаковка:
Tape & Reel (TR)
Datasheet:
BAS16W-7-F Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BAS16W-7-F
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):127321faf7ab6033447f8457edc41d44
Current - Average Rectified (Io):fc92dd3b69ad1d37d6fd6bb30e37477e
Voltage - Forward (Vf) (Max) @ If:ab79aafa3ed265e5c7f3b3c0b1911b62
Speed:a0189688e63fa3c4576aed928f6b00f7
Reverse Recovery Time (trr):df86ab52d54b0f02fd15a86700e29487
Current - Reverse Leakage @ Vr:b4496d30e1907852925b860c6a57d9f2
Capacitance @ Vr, F:6cdafe31c08a50a8526aa382e88f3901
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:2cffa920bac58c995bd937e7a19a7bc4
Supplier Device Package:c4937a7af6425ed4f99ff5e1d5cd4746
Operating Temperature - Junction:65170ef500fce04c4d928fa302cdc403
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BX34A_R1_00001
BX34A_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BYG24GHM3_A/H
BYG24GHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A DO214
MURS460-M3/I
MURS460-M3/I
Vishay General Semiconductor - Diodes Division
4A 600V 50NS FSMC UF RECT SMD
CD6916
CD6916
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
1N6641
1N6641
Microchip Technology
DIODE GEN PURPOSE
R9G01422XX
R9G01422XX
Powerex Inc.
DIODE GP 1.4KV 2200A DO200AB
VS-MBR350
VS-MBR350
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 3A C16
GP10BHE3/54
GP10BHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
RS2BHE3/52T
RS2BHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1.5A DO214AA
ES1DLHRHG
ES1DLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
MUR360S R6
MUR360S R6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
ES3F R7
ES3F R7
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
Вас также может заинтересовать
3.0SMCJ10CA-13
3.0SMCJ10CA-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
3.0SMCJ40CA-13
3.0SMCJ40CA-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
FL1470023
FL1470023
Diodes Incorporated
CRYSTAL 14.7000MHZ SURFACE MOUNT
FD5000034
FD5000034
Diodes Incorporated
XTAL OSC XO 50.0000MHZ CMOS SMD
HX21480001
HX21480001
Diodes Incorporated
XTAL OSC XO 48.0000MHZ LVCMOS
SBL1650CT
SBL1650CT
Diodes Incorporated
DIODE ARRAY SCHOTTKY 50V TO220AB
PDS1040-13
PDS1040-13
Diodes Incorporated
DIODE SCHOTTKY 40V 10A POWERDI5
DMN3055LFDBQ-7
DMN3055LFDBQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
PI90LVT211QE
PI90LVT211QE
Diodes Incorporated
IC CLK BUFFER 2:6 250MHZ 28QSOP
PI7C9X762BLEX
PI7C9X762BLEX
Diodes Incorporated
IC BRIDGE CTRLR I2C/SPI
74LVC2G32HD4-7
74LVC2G32HD4-7
Diodes Incorporated
IC GATE OR 2CH 2-INP DFN2010-8
AP7366-28W5-7
AP7366-28W5-7
Diodes Incorporated
IC REG LINEAR 2.8V 600MA SOT25