DI9952T

DI9952T

Images are for reference only
See Product Specifications

DI9952T
Описание:
MOSFET N/P-CH 30V 2.9A 8-SOIC
Упаковка:
Cut Tape (CT)
Datasheet:
DI9952T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DI9952T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 78
Stock:
78 Can Ship Immediately
  • Делиться:
Для использования с
NTLJS7D2P02P8ZTAG
NTLJS7D2P02P8ZTAG
onsemi
MOSFET P-CH 20V 7.9A 6PQFN
IPT010N08NM5ATMA1
IPT010N08NM5ATMA1
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-8
DMP2160UW-7
DMP2160UW-7
Diodes Incorporated
MOSFET P-CH 20V 1.5A SOT-323
PJD45N06A-AU_L2_000A1
PJD45N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
FDPF3860TYDTU
FDPF3860TYDTU
Fairchild Semiconductor
MOSFET N-CH 100V 20A TO220F-3
FDMS8020
FDMS8020
onsemi
MOSFET N-CH 30V 26A/42A 8PQFN
TPH6R003NL,LQ
TPH6R003NL,LQ
Toshiba Semiconductor and Storage
MOSFET N CH 30V 38A 8SOP
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
IXFV22N60P
IXFV22N60P
IXYS
MOSFET N-CH 600V 22A PLUS220
FDB5800_F085
FDB5800_F085
onsemi
MOSFET N-CH 60V 14A/80A D2PAK
IRFC4368D
IRFC4368D
Infineon Technologies
MOSFET N-CH WAFER
RJK0655DPB-WS#J5
RJK0655DPB-WS#J5
Renesas Electronics America Inc
IGBT
Вас также может заинтересовать
DESD5V0L2BTQ-7
DESD5V0L2BTQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
3.0SMCJ170CA-13
3.0SMCJ170CA-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
FW2500054Q
FW2500054Q
Diodes Incorporated
CRYSTAL 25.0000MHZ 8PF SMD
RABF22-13
RABF22-13
Diodes Incorporated
BRIDGE RECTIFIER ABF/SOPA-4(TYPE
BZX84C16-7-F
BZX84C16-7-F
Diodes Incorporated
DIODE ZENER 16V 300MW SOT23-3
DMT31M6LPS-13
DMT31M6LPS-13
Diodes Incorporated
MOSFET N-CH 30V 35.8A PWRDI5060
DMTH61M8LPSQ-13
DMTH61M8LPSQ-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
PT7C433833AUEX
PT7C433833AUEX
Diodes Incorporated
IC RTC I2C SER 8MSOP T&R 2.5K
AP5725FDCG-7
AP5725FDCG-7
Diodes Incorporated
IC LED DRVR RGLTR PWM 750MA 6DFN
AL1782T16E-13
AL1782T16E-13
Diodes Incorporated
IC LED DRVR LIN PWM 1.5A 16TSSOP
AP3606FNTR-G1
AP3606FNTR-G1
Diodes Incorporated
IC LED DRIVER RGLTR 20MA 16QFN
PT7A7523WEX
PT7A7523WEX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL 8SOIC