DI9952T

DI9952T

Images are for reference only
See Product Specifications

DI9952T
Описание:
MOSFET N/P-CH 30V 2.9A 8-SOIC
Упаковка:
Cut Tape (CT)
Datasheet:
DI9952T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DI9952T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Cut Tape (CT)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 78
Stock:
78 Can Ship Immediately
  • Делиться:
Для использования с
G3R40MT12K
G3R40MT12K
GeneSiC Semiconductor
SIC MOSFET N-CH 71A TO247-4
NP33N06YDG-E1-AY
NP33N06YDG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 60V 33A 8HSON
FDPF33N25TRDTU
FDPF33N25TRDTU
onsemi
MOSFET N-CHANNEL 250V TO220F
PJD60N04_L2_00001
PJD60N04_L2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
IRFR1018EPBF-INF
IRFR1018EPBF-INF
Infineon Technologies
HEXFET POWER MOSFET
DMP26M1UFG-13
DMP26M1UFG-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V POWERDI3333
SIR846ADP-T1-RE3
SIR846ADP-T1-RE3
Vishay Siliconix
MOSFET N-CH 100V 60A PPAK SO-8
IRF6646TR1
IRF6646TR1
Infineon Technologies
MOSFET N-CH 80V 12A DIRECTFET
IPI12CNE8N G
IPI12CNE8N G
Infineon Technologies
MOSFET N-CH 85V 67A TO262-3
IXTH60N10
IXTH60N10
IXYS
MOSFET N-CH 100V 60A TO247
TPCC8067-H,LQ(S
TPCC8067-H,LQ(S
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 9A 8TSON
PSMN2R9-30MLC/GFX
PSMN2R9-30MLC/GFX
NXP USA Inc.
PSMN2R9-30MLC/GFX
Вас также может заинтересовать
SMBJ6.0A-13-F
SMBJ6.0A-13-F
Diodes Incorporated
TVS DIODE 6VWM 10.3VC SMB
FL3000053
FL3000053
Diodes Incorporated
CRYSTAL 30.0000MHZ 10PF SMD
FM2450003
FM2450003
Diodes Incorporated
XTAL OSC XO 24.5760MHZ CMOS SMD
SB520-T
SB520-T
Diodes Incorporated
DIODE SCHOTTKY 20V 5A DO201AD
SB320-B
SB320-B
Diodes Incorporated
DIODE SCHOTTKY 20V 3A DO201AD
DDTC143XCA-7
DDTC143XCA-7
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
PI3USB221XAEX
PI3USB221XAEX
Diodes Incorporated
IC USB SWITCH 10TLLGA
PI74FCT162245TVE
PI74FCT162245TVE
Diodes Incorporated
IC TXRX NON-INVERT 5.5V 48SSOP
AL1696-30AS7-13
AL1696-30AS7-13
Diodes Incorporated
IC LED DRIVER OFFL TRIAC 3A 7SO
AP91352MN1-DT8-7R
AP91352MN1-DT8-7R
Diodes Incorporated
IC PWR REGULATOR N-CH 1:1 12WQFN
AP431SHBRTR-G1
AP431SHBRTR-G1
Diodes Incorporated
IC VREF SHUNT ADJ 1% SOT89-3
AP7315D-28W5-7
AP7315D-28W5-7
Diodes Incorporated
IC REG LINEAR 2.8V 150MA SOT25