DMG1012T-13

DMG1012T-13

Images are for reference only
See Product Specifications

DMG1012T-13
Описание:
MOSFET N-CH 20V 630MA SOT523 T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
DMG1012T-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMG1012T-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:120bf44f7ea172048ad30c428af026c0
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:41f8c0bb2d01bd6a87d1a3c51f554120
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:e8720996938c1eed09d62ebb74917efc
Vgs (Max):f5c4cca94723a2caec8107440f9ccaee
Input Capacitance (Ciss) (Max) @ Vds:5811072866101c394f3105080d80c85b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):43363884785a88e8f0263392e1ad4075
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:a3aeb12e681ccde3b9a11bc7ce332447
Package / Case:a3aeb12e681ccde3b9a11bc7ce332447
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IMZA65R027M1HXKSA1
IMZA65R027M1HXKSA1
Infineon Technologies
MOSFET 650V NCH SIC TRENCH
BUK6228-55C,118
BUK6228-55C,118
NXP USA Inc.
PFET, 31A I(D), 55V, 0.044OHM, 1
STD16NF25
STD16NF25
STMicroelectronics
MOSFET N-CH 250V 14A DPAK
PMV37EN2R
PMV37EN2R
Nexperia USA Inc.
MOSFET N-CH 30V 4.5A TO236AB
IRF720SPBF
IRF720SPBF
Vishay Siliconix
MOSFET N-CH 400V 3.3A D2PAK
NVHL072N65S3
NVHL072N65S3
onsemi
MOSFET N-CH 650V 44A TO247-3
2SJ208-AZ
2SJ208-AZ
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
AOTF600A70FL
AOTF600A70FL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 8.5A TO220F
YJQ40P03A-F1-1100HF
YJQ40P03A-F1-1100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 30V 40A DFN3333-8L
IPI90R1K2C3XKSA1
IPI90R1K2C3XKSA1
Infineon Technologies
MOSFET N-CH 900V 5.1A TO262-3
PMN40LN,135
PMN40LN,135
NXP USA Inc.
MOSFET N-CH 30V 5.4A 6TSOP
N0609N-S19-AY#YW
N0609N-S19-AY#YW
Renesas Electronics America Inc
MOSFET N-CHANNEL
Вас также может заинтересовать
SMBJ48CA-13
SMBJ48CA-13
Diodes Incorporated
TVS DIODE 48VWM 77.4VC SMB
P6KE170CA-T
P6KE170CA-T
Diodes Incorporated
TVS DIODE 145VWM 234VC DO15
1.5KE6V8A-B
1.5KE6V8A-B
Diodes Incorporated
TVS DIODE 5.8VWM 10.5VC DO201
FH2400029
FH2400029
Diodes Incorporated
CRYSTAL 24.0000MHZ 7PF SMD
FK2500026
FK2500026
Diodes Incorporated
XTAL OSC XO 25.0000MHZ CMOS SMD
FK2500060
FK2500060
Diodes Incorporated
XTAL OSC XO 25.0000MHZ CMOS
B160-13-G
B160-13-G
Diodes Incorporated
DIODE SCHOTTKY 60V 1A SMA
SB860-B
SB860-B
Diodes Incorporated
DIODE SCHOTTKY 60V 8A DO201AD
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BCX51TA
BCX51TA
Diodes Incorporated
TRANS PNP 45V 1A SOT89-3
DXTP3C60PSQ-13
DXTP3C60PSQ-13
Diodes Incorporated
TRANS PNP 60V 3A POWERDI5060-8
ZR431CL
ZR431CL
Diodes Incorporated
IC VREF SHUNT ADJ 2% TO92